MOCVD-GROWN ALGAAS GAAS HBTS WITH EPITAXIALLY EMBEDDED P+ LAYERS IN EXTRINSIC BASE

被引：7
|
作者：
TAIRA, K
KAWAI, H
KANEKO, K
机构：
来源：
ELECTRONICS LETTERS | 1987年 / 23卷 / 19期
关键词：
D O I：
10.1049/el:19870694
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
TRANSISTORS, BIPOLAR
引用
收藏
页码：989 / 990
页数：2
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