DETERMINATION OF A PROFILE CAPTURED IN A CHARGE SILICON-NITRIDE

被引：0
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作者：
SHIRSHOV, YM
NABOK, AV
机构：
来源：
ZHURNAL TEKHNICHESKOI FIZIKI | 1983年 / 53卷 / 09期
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O59 [应用物理学];
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页码：1830 / 1833
页数：4
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