DETERMINATION OF A PROFILE CAPTURED IN A CHARGE SILICON-NITRIDE

被引：0

作者：

SHIRSHOV, YM

NABOK, AV

机构：

来源：

ZHURNAL TEKHNICHESKOI FIZIKI | 1983年 / 53卷 / 09期

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暂无

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O59 [应用物理学];

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引用

页码：1830 / 1833

页数：4

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