IMPROVED 2DEG MOBILITY IN INVERTED GAAS/N-ALGAAS HETEROSTRUCTURES GROWN BY MBE

被引：39
|
作者：
SASA, S
SAITO, J
NANBU, K
ISHIKAWA, T
HIYAMIZU, S
机构：
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS | 1984年 / 23卷 / 08期
关键词：
D O I：
10.1143/JJAP.23.L573
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
引用
收藏
页码：L573 / L575
页数：3
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