ELECTRONIC-STRUCTURE AND PROPERTIES OF NI-SI(001) AND NI-SI(111) REACTIVE INTERFACES

被引：48
|
作者：
BISI, O [1 ]
CHIAO, LW [1 ]
TU, KN [1 ]
机构：
[1] IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598
来源：
PHYSICAL REVIEW B | 1984年 / 30卷 / 08期
关键词：
D O I：
10.1103/PhysRevB.30.4664
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
引用
收藏
页码：4664 / 4674
页数：11
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