FAST AND ACCURATE EXTRACTION OF PARASITIC RESISTANCES FOR NONLINEAR GAAS-MESFET DEVICE MODELS

被引：7
|
作者：
DEBIE, P
MARTENS, L
机构：
[1] Department of Information Technology, University of Gent-IMEC
来源：
IEEE TRANSACTIONS ON ELECTRON DEVICES | 1995年 / 42卷 / 12期
关键词：
D O I：
10.1109/16.477787
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A new and accurate technique for extracting the parasitic resistance values from GaAs MESFET's for nonlinear circuit models is presented. The technique makes use of only two simple de measurements. Using this extraction method, good agreement between simulated and measured data for the nonlinear Statz MESFET model is obtained, so it is very appropriate for large-signal device and circuit modeling purposes. The presented extraction method is implemented in HP-ICCAP, a software tool for parameter extraction, In addition, all the measurements are controlled by this software, so a high level of automation is obtained.
引用
收藏
页码：2239 / 2242
页数：4
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