GRAIN-SIZE, TEXTURE AND DOPING PROFILES OF POLYCRYSTALLINE SILICON INTERFACES

被引：0
|
作者：
EICHERMULLER, H
TREITINGER, L
VANPHILIPSBORN, H
机构：
[1] SIEMENS AG,UB BAUELEMENTE,D-8000 MUNCHEN,FED REP GER
[2] UNIV REGENSBURG,D-8400 REGENSBURG,FED REP GER
来源：
ACTA CRYSTALLOGRAPHICA SECTION A | 1984年 / 40卷
关键词：
D O I：
10.1107/S0108767384094277
中图分类号：
O6 [化学];
学科分类号：
0703 ;
摘要：
引用
收藏
页码：C187 / C187
页数：1
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