GRAIN-SIZE, TEXTURE AND DOPING PROFILES OF POLYCRYSTALLINE SILICON INTERFACES

被引：0

作者：

EICHERMULLER, H

TREITINGER, L

VANPHILIPSBORN, H

机构：

[1] SIEMENS AG,UB BAUELEMENTE,D-8000 MUNCHEN,FED REP GER

[2] UNIV REGENSBURG,D-8400 REGENSBURG,FED REP GER

来源：

ACTA CRYSTALLOGRAPHICA SECTION A | 1984年 / 40卷

关键词：

D O I：

10.1107/S0108767384094277

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

引用

页码：C187 / C187

页数：1

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