CHARACTERIZATION AND RELIABILITY RESULTS ON HIGH ELECTRON-MOBILITY TRANSISTORS (HEMT)

被引：0

作者：

BELHADJ, A ^{[1
]}

AUDREN, P ^{[1
]}

VUCHENER, C ^{[1
]}

PAUGAM, J ^{[1
]}

DUMAS, JM ^{[1
]}

机构：

[1] UNIV LANNION,INST TECHNOL,F-22301 LANNION,FRANCE

来源：

ANNALES DES TELECOMMUNICATIONS-ANNALS OF TELECOMMUNICATIONS | 1990年 / 45卷 / 11-12期

关键词：

2 DIMENSIONAL ELECTRON GAS TRANSISTOR; RELIABILITY; HETEROJUNCTION TRANSISTOR;

D O I：

暂无

中图分类号：

TN [电子技术、通信技术];

学科分类号：

0809 ;

摘要：

The telecommunication systems require introduction of high performance devices especially for microwave applications. The emergence of molecular beam epitaxy as a growth technique allows the fabrication of heterostructure-based performing devices. Thus, this communication will focus on the reliability of technologies used for the development of field effect transistor using heterostructures and called HEMT (high electron mobility transistor).

引用

页码：585 / 590

页数：6

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