METAL-(N) ALGAAS-GAAS TWO-DIMENSIONAL ELECTRON-GAS FET

被引：485

|

作者：

DELAGEBEAUDEUF, D

LINH, NT

机构：

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1982年 / 29卷 / 06期

关键词：

D O I：

10.1109/T-ED.1982.20813

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

收藏

页码：955 / 960

页数：6

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