TOPOGRAPHY INDUCED PREFERENTIAL CRYSTALLIZATION OF THERMALLY GROWN SILICON DIOXIDE FILMS

被引：1
|
作者：
CHENG, J
LEMONS, RA
机构：
来源：
JOURNAL OF ELECTRONIC MATERIALS | 1983年 / 12卷 / 01期
关键词：
D O I：
10.1007/BF02651635
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
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页码：61 / 69
页数：9
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