Device processing and integration of ferroelectric thin films for memory applications

被引：18
|
作者：
Achard, H
Mace, H
Peccoud, L
机构：
[1] C.E.A., L.E.T.I./Technologies Avancées CENG, 17 r. des Martyrs
来源：
MICROELECTRONIC ENGINEERING | 1995年 / 29卷 / 1-4期
关键词：
D O I：
10.1016/0167-9317(95)00108-5
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
This review deals with the tasks involved in integrating ferroelectric thin films for memory applications. Main emphasis is put on process integration. Some of the results presented (especially dry etching ones) come from the European ESPRIT project called FELMAS. The compatibility of CMOS devices and ferroelectric capacitors is discussed and main issues toward the development of VLSI memories, are outlined.
引用
收藏
页码：19 / 28
页数：10
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