QUENCHING OF METAL STICKING BY PHOTOOXIDATION OF AN AMORPHOUS-SEMICONDUCTOR - ZN ON GES2

被引：6

作者：

HORTON, JH

HARDACRE, C

BADDELEY, CJ

MOGGRIDGE, GD

ORMEROD, RM

LAMBERT, RM

机构：

[1] UNIV CAMBRIDGE,DEPT CHEM,CAMBRIDGE CB2 1EW,ENGLAND

[2] UNIV KEELE,DEPT CHEM,KEELE ST5 5BG,STAFFS,ENGLAND

来源：

PHYSICAL REVIEW B | 1995年 / 52卷 / 03期

关键词：

D O I：

10.1103/PhysRevB.52.2054

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The sticking probability of Zn on amorphous GeS2 is greatly reduced when the UHV-prepared semiconductor film is photo-oxidized in the presence of band-gap radiation. The phenomena underlying this interesting effect have been elucidated in a kinetic and structural study using electron spectroscopy and x-ray-absorption spectroscopy. Selective photo-oxidation of Ge sites strongly suppresses the formation of Ge-Zn bonds at the interface: these act as nucleation sites for the growing metal film. A consistent picture emerges that also accounts for the very different behavior encountered during deposition of Ag films with and without photo-oxidation in the closely related Ag/GeS2 system.

引用

页码：2054 / 2062

页数：9

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