DYNAMICS AND KINETICS OF CARRIER SYSTEM IN PHOTOEXCITED GE AND SI OBSERVED BY OPTICALLY DETECTED CYCLOTRON-RESONANCE

被引:7
|
作者
TOMARU, T
OHYAMA, T
OTSUKA, E
机构
[1] Department Of Physics, College of General Education, Osaka University, Toyonaka
关键词
OPTICALLY DETECTED CYCLOTRON RESONANCE (ODCR); HOT CARRIER; FREE EXCITON; DONOR-BOUND EXCITON; ACCEPTOR-BOUND EXCITON; BOUND MULTIEXCITON COMPLEX; ELECTRON-HOLE DROPLET (EHD); IMPACT DISSOCIATION;
D O I
10.1143/JPSJ.61.1798
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
We have observed optically detected cyclotron resonance (ODCR) in Ge and Si. Complicated but outstanding signals have been observed in As-doped Ge. They are explained on the basis of our results obtained earlier. As for Si, kinetics of a system consisting of free carriers, free and bound excitons, bound multiexciton complexes and electron-hole droplets under cyclotron resonance condition is analyzed by means of rate equations, together with "effective temperature" introduced. Besides, the change in photoluminescence spectrum caused by cyclotron resonance is compared with that caused by DC electric field, where a new advantage of ODCR is found.
引用
收藏
页码:1798 / 1816
页数:19
相关论文
共 44 条
  • [31] CALCULATION OF QUANTUM-LIMIT CYCLOTRON-RESONANCE LINEWIDTHS IN GE AND SI BY THE ISOLATION-PROJECTION TECHNIQUE
    CHO, YJ
    CHOI, SD
    PHYSICAL REVIEW B, 1994, 49 (20) : 14301 - 14306
  • [32] LINEWIDTH OF QUANTUM LIMIT CYCLOTRON-RESONANCE .1. PHONON SCATTERINGS IN GE, SI, CDS AND INSB
    KOBORI, H
    OHYAMA, T
    OTSUKA, E
    JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN, 1990, 59 (06) : 2141 - 2163
  • [33] OPTICALLY DETECTED CYCLOTRON-RESONANCE STUDY OF HIGH-PURITY 6H-SIC CVD-LAYERS
    SON, NT
    KORDINA, O
    KONSTANTINOV, AO
    CHEN, WM
    SORMAN, E
    MONEMAR, B
    JANZEN, E
    COMPOUND SEMICONDUCTORS 1994, 1995, (141): : 415 - 418
  • [34] MAGNETOOPTICAL AND FAR-INFRARED OPTICALLY DETECTED CYCLOTRON-RESONANCE DETERMINATION OF THE EFFECTIVE MASS IN GAAS1-XPX
    OMLING, P
    WETZEL, C
    EFROS, AL
    MEYER, BK
    PHYSICA B, 1993, 184 (1-4): : 164 - 167
  • [35] STUDY OF INALAS/INGAAS HETEROJUNCTION BIPOLAR-TRANSISTOR LAYERS BY OPTICALLY DETECTED CYCLOTRON-RESONANCE (VOL 66, PG 2543, 1995)
    CHEN, YF
    SHEN, JL
    DAI, YD
    JAN, GJ
    LIN, HH
    APPLIED PHYSICS LETTERS, 1995, 67 (05) : 727 - 727
  • [36] OPTICALLY DETECTED CYCLOTRON-RESONANCE STUDIES OF RADIATIVE PROCESSES IN ALXGA1-XAS/GAAS HIGH-ELECTRON-MOBILITY STRUCTURES
    GODLEWSKI, M
    LUNDSTROM, T
    ZHAO, QX
    CHEN, WM
    HOLTZ, PO
    MONEMAR, B
    ANDERSON, TG
    PHYSICAL REVIEW B, 1995, 52 (20): : 14688 - 14692
  • [37] DEPENDENCE OF ELECTRON EFFECTIVE-MASS ON ALLOY COMPOSITION OF INALGAAS LATTICE-MATCHED TO INP STUDIED BY OPTICALLY DETECTED CYCLOTRON-RESONANCE
    CHEN, YF
    DAI, YT
    FAN, JC
    LEE, TL
    LIN, HH
    APPLIED PHYSICS LETTERS, 1995, 67 (09) : 1256 - 1258
  • [38] Optically detected cyclotron resonance in heavily boron-doped silicon nanostructures on n-Si (100)
    Bagraev, N. T.
    Kuzmin, R. V.
    Gurin, A. S.
    Klyachkin, L. E.
    Malyarenko, A. M.
    Mashkov, V. A.
    SEMICONDUCTORS, 2014, 48 (12) : 1605 - 1612
  • [39] Optically detected cyclotron resonance in heavily boron-doped silicon nanostructures on n-Si (100)
    N. T. Bagraev
    R. V. Kuzmin
    A. S. Gurin
    L. E. Klyachkin
    A. M. Malyarenko
    V. A. Mashkov
    Semiconductors, 2014, 48 : 1605 - 1612
  • [40] NEW PHASES OF THE 2D ELECTRON-SYSTEM IN THE ULTRA-QUANTUM LIMIT OBSERVED BY CYCLOTRON-RESONANCE
    SUMMERS, GM
    WARBURTON, RJ
    MICHELS, JG
    NICHOLAS, RJ
    HARRIS, JJ
    FOXON, CT
    PHYSICAL REVIEW LETTERS, 1993, 70 (14) : 2150 - 2153