Inter valley phonon scattering mechanism in strained Si/(101) Si1-x Ge-x

被引：1

作者：

Jin Zhao ^{[1
]}

Qiao Liping ^{[2
]}

Liu Ce ^{[1
]}

Guo Chen ^{[1
]}

Liu Lidong ^{[1
]}

Wang Jiang'an ^{[1
]}

机构：

[1] Changan Univ, Sch Informat Engn, Xian 710064, Peoples R China

[2] Tibet Univ Nationalities, Sch Informat Engn, Xianyang 712082, Peoples R China

来源：

JOURNAL OF SEMICONDUCTORS | 2013年 / 34卷 / 07期

基金：

中国国家自然科学基金;

关键词：

inter valley scattering; strained Si; model;

D O I：

10.1088/1674-4926/34/7/072002

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

Inter valley scattering has a great impact on carrier mobility of strained Si materials, so based on Fermi's golden rule and the theory of Boltzmann collision term approximation, inter valley phonon scattering mechanism of electrons in nano scale strained Si (101) materials is established under the influence of both energy and stress. It shows that inter valley phonon f(2), f(3), g3 scattering rates decrease markedly in nano scale strained Si (101) materials with increasing stress. The quantized models can provide valuable references to the understanding of strained Si materials and the research on electron carrier mobility.

引用

页数：4

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