CHARACTERIZATION AND SIMULATION OF SI ION-IMPLANTATION IN GAAS

被引：0
|
作者：
BINDAL, A [1 ]
HWU, R [1 ]
WANG, KL [1 ]
机构：
[1] UNIV CALIF LOS ANGELES,DEPT ELECT ENGN,DEVICE RES LAB,LOS ANGELES,CA 90024
来源：
JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1986年 / 133卷 / 08期
关键词：
D O I：
暂无
中图分类号：
O646 [电化学、电解、磁化学];
学科分类号：
081704 ;
摘要：
引用
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页码：C327 / C327
页数：1
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