TRANSIENT RESPONSE OF INSULATED-GATE FIELD-EFFECT TRANSISTORS

被引：11

|

作者：

OREILLY, TJ

机构：

来源：

SOLID-STATE ELECTRONICS | 1965年 / 8卷 / 12期

关键词：

D O I：

10.1016/0038-1101(65)90159-0

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

收藏

页码：947 / +

页数：1

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