Study of Thermal Stability of Ni Silicide using Ni-V Alloy

被引：0

作者：

Zhong, Zhun ^{[1
]}

Oh, Soon-Young ^{[1
]}

Lee, Won-Jae ^{[1
]}

Zhang, Ying-Ying ^{[1
]}

Jung, Soon-Yen ^{[1
]}

Li, Shi-Guang ^{[1
]}

Lee, Ga-Won ^{[1
]}

Wang, Jin-Suk ^{[1
]}

Lee, Hi-Deok ^{[1
]}

Kim, Yeong-Cheol ^{[2
]}

机构：

[1] Chungnam Natl Univ, Dept Elect Engn, 220 Gung Dong, Daejeon 305764, South Korea

[2] Korea Univ Technol & Educ, Dept Mat Engn, Cheonan Si 330702, Chungnam, South Korea

来源：

TRANSACTIONS ON ELECTRICAL AND ELECTRONIC MATERIALS | 2008年 / 9卷 / 02期

关键词：

Ni-V(Nickel vanadium) alloy; Thermal stability; Ni silicide; RTP;

D O I：

10.4313/TEEM.2008.9.2.047

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

In this paper, thermal stability of Nickel silicide formed on p-type silicon wafer using Ni-V alloy film was studied. As compared with pure Ni, Ni-V shows better thermal stability. The addition of Vanadium suppresses the phase transition of NiSi to NiSi2 effectively. Ni-V single structure shows the best thermal stability compared with the other Ni-silicide using TiN and Co/TiN capping layers. To enhance the thermal stability up to 650 degrees C and find out the optimal thickness of Ni silicide, different thickness of Ni-V was also investigated in this work.

引用

页码：47 / 51

页数：5

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