MISFIT DISLOCATIONS IN SCREW ORIENTATION

被引:51
|
作者
MATTHEWS, JW [1 ]
机构
[1] CAVENDISH LAB,MADINGLEY RD,CAMBRIDGE,ENGLAND
来源
PHILOSOPHICAL MAGAZINE | 1974年 / 29卷 / 04期
关键词
D O I
10.1080/14786437408222071
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
引用
收藏
页码:797 / 802
页数:6
相关论文
共 50 条
  • [31] Misfit dislocations in GaAsN/GaAs interface
    J. Toivonen
    T. Tuomi
    J. Riikonen
    L. Knuuttila
    T. Hakkarainen
    M. Sopanen
    H. Lipsanen
    P. J. McNally
    W. Chen
    D. Lowney
    Journal of Materials Science: Materials in Electronics, 2003, 14 : 267 - 270
  • [32] Misfit dislocations in nanoscale ferroelectric heterostructures
    Nagarajan, V
    Jia, CL
    Kohlstedt, H
    Waser, R
    Misirlioglu, IB
    Alpay, SP
    Ramesh, R
    APPLIED PHYSICS LETTERS, 2005, 86 (19) : 1 - 3
  • [33] ON THE ENERGY AND CONFIGURATION OF ORTHOGONAL MISFIT DISLOCATIONS
    HIRTH, JP
    SCRIPTA METALLURGICA ET MATERIALIA, 1992, 27 (06): : 681 - 686
  • [34] ELECTRON-MICROSCOPY OF MISFIT DISLOCATIONS
    TAKAYANAGI, K
    YAGI, K
    HONJO, G
    ACTA CRYSTALLOGRAPHICA SECTION A, 1975, 31 : S265 - S265
  • [35] MISFIT DISLOCATIONS IN HETEROEPITAXIAL SI ON SAPPHIRE
    ABRAHAMS, MS
    BUIOCCHI, CJ
    CORBOY, JF
    CULLEN, GW
    APPLIED PHYSICS LETTERS, 1976, 28 (05) : 275 - 277
  • [36] Nanomechanical modeling of misfit dislocations at heterointerfaces
    Ernst, F
    Raj, R
    Rühle, M
    ZEITSCHRIFT FUR METALLKUNDE, 1999, 90 (12): : 961 - 977
  • [37] Misfit dislocations and stresses in GaN epilayers
    Appl Phys Lett, 16 (2304):
  • [38] Nanomechanical Modeling of Misfit Dislocations at Heterointerfaces
    Ernst, F.
    Raj, R.
    Rühle, M.
    International Journal of Materials Research, 1999, 90 (12): : 961 - 977
  • [39] CONTRAST OF CLOSELY SPACED MISFIT DISLOCATIONS
    YAGI, K
    TAKAYANAGI, K
    HONJO, G
    JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN, 1972, 32 (05) : 1445 - +
  • [40] Misfit dislocations in wire composite solids
    Gutkin, MY
    Ovid'ko, IA
    Sheinerman, AG
    JOURNAL OF PHYSICS-CONDENSED MATTER, 2000, 12 (25) : 5391 - 5401