ANNEALING CHARACTERISTICS OF BORON-IMPLANTED AND PHOSPHORUS-IMPLANTED POLYCRYSTALLINE SILICON

被引：11
|
作者：
SETO, JYW [1 ]
机构：
[1] GM CORP,CTR TECH,DEPT ELECTR,RES LABS,WARREN,MI 48090
来源：
JOURNAL OF APPLIED PHYSICS | 1976年 / 47卷 / 12期
关键词：
D O I：
10.1063/1.322588
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
引用
收藏
页码：5167 / 5170
页数：4
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