INFLUENCE OF SOURCE-DRAIN SERIES RESISTANCE ON MOSFET FIELD-EFFECT MOBILITY

被引：17
|
作者：
CABONTILL, B
GHIBAUDO, G
CRISTOLOVEANU, S
机构：
[1] Ecole Natl Superieure d'Electronique, et de Radio-Electricite de Grenoble,, Lab de Physique des Composants a, Ecole Natl Superieure d'Electronique et de Radio-Electricite de Grenoble, Lab de Physique des Compo
来源：
ELECTRONICS LETTERS | 1985年 / 21卷 / 11期
关键词：
D O I：
10.1049/el:19850324
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
4
引用
收藏
页码：457 / 458
页数：2
相关论文
共 50 条
  • [1] Influence of source-drain electric field on mobility and charge transport in organic field-effect transistors
    Hamadani, B. H.
    Richter, C. A.
    Gundlach, D. J.
    Kline, R. J.
    McCulloch, I.
    Heeney, M.
    JOURNAL OF APPLIED PHYSICS, 2007, 102 (04)
  • [2] Influence of mobility model on extraction of stress dependent source-drain series resistance
    De Souza, MM
    Manhas, SK
    Sekhar, DC
    Oates, AS
    Chaparala, P
    MICROELECTRONICS RELIABILITY, 2004, 44 (01) : 25 - 32
  • [3] ANALYTICAL TREATMENT OF MOSFET SOURCE-DRAIN RESISTANCE.
    Pimbley, Joseph M.
    Cumberbatch, Ellis
    Hagan, Patrick S.
    IEEE Transactions on Electron Devices, 1987, ED-34 (04) : 834 - 838
  • [4] Source-drain partitioning in MOSFET
    Roy, Ananda S.
    Enz, Christian C.
    Sallese, Jean-Michel
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 2007, 54 (06) : 1384 - 1393
  • [5] GENERALIZED-METHOD FOR EXTRACTION OF MOSFET SOURCE-DRAIN SERIES RESISTANCE AGAINST TEMPERATURE
    EMRANI, A
    GHIBAUDO, G
    BALESTRA, F
    ELECTRONICS LETTERS, 1993, 29 (09) : 786 - 788
  • [6] Ambipolar pentacene field-effect transistors with calcium source-drain electrodes
    Yasuda, T
    Goto, T
    Fujita, K
    Tsutsui, T
    APPLIED PHYSICS LETTERS, 2004, 85 (11) : 2098 - 2100
  • [7] Impact of various silicide techniques on SiGe source-drain series resistance and mobility of pMOSFETs
    Chang, J.
    Ji, X.
    Ma, L.
    Liao, Y.
    Yan, F.
    Guo, Q.
    Zhang, R.
    SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2013, 28 (11)
  • [8] Symmetric Source and Drain Voltage Clamping Scheme for Complete Source-Drain Symmetry in Field-Effect Transistor Modeling
    Xia, Kejun
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 2020, 67 (08) : 3042 - 3048
  • [9] Higher-Order Effect of Source-Drain Series Resistance on Saturation Drain Current in Sub-20nm Metal-Oxide-Semiconductor Field-Effect Transistors
    Yoon, JongChul
    Hiroki, Akira
    Kobayashi, Kazutoshi
    JAPANESE JOURNAL OF APPLIED PHYSICS, 2012, 51 (11)
  • [10] Source-drain symmetry in unified regional MOSFET model
    Ben Chiah, S
    Zhou, X
    Lim, KY
    Chan, L
    Chu, S
    IEEE ELECTRON DEVICE LETTERS, 2004, 25 (05) : 311 - 313
12345