MONTE-CARLO SIMULATION OF ATOMIC LAYER EPITAXY

被引：2
|
作者：
PLOTZ, WM [1 ]
HINGERL, K [1 ]
SITTER, H [1 ]
机构：
[1] JOHANNES KEPLER UNIV, INST PHYS EXPTL, FESTKORPERPHYS ABT, A-4040 LINZ, AUSTRIA
来源：
SEMICONDUCTOR SCIENCE AND TECHNOLOGY | 1994年 / 9卷 / 12期
关键词：
D O I：
10.1088/0268-1242/9/12/010
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A continuous space Monte Carlo method is used to simulate epitaxial growth of lattice matched and mismatched compound epilayers. For comparison with experimental findings we calculate the growth rate of our layer by layer epitaxy as a function of temperature. The method also reveals the incorporation of dislocations and the accommodation of strain to overcome the lattice mismatch between substrate and epilayer. Finally we show that continuous space models can be used to calculate rhombic distortion of a strained epilayer.
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页码：2224 / 2228
页数：5
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