SCHOTTKY-BARRIER HEIGHTS OF IR/P-SI AND IR/STRAINED P-SI1-XGEX JUNCTIONS

被引：8
|
作者：
NUR, O [1 ]
SARDELA, MR [1 ]
WILLANDER, M [1 ]
TURAN, R [1 ]
机构：
[1] MIDDLE EAST TECH UNIV, DEPT PHYS, ANKARA 06531, TURKEY
来源：
SEMICONDUCTOR SCIENCE AND TECHNOLOGY | 1995年 / 10卷 / 04期
关键词：
D O I：
10.1088/0268-1242/10/4/029
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Low barrier height Schottky diodes, Ir/p-Si and Ir/p-Si1-xGex, with x = 14%, have been investigated using current-voltage (I-V) analysis. The crystalline quality, the Ge fraction and the strain state of the Si1-xGex alloy were investigated using a high-resolution multicrystal x-ray diffractometer. The Schottky barrier height of the Ir/strained p-Si0.86Ge0.14 junction was found to be 70 meV smaller than that of the Ir/p-Si junction. The relationship between this barrier height difference and the energy band structure of Si/strained Si1-xGex is discussed.
引用
收藏
页码：551 / 555
页数：5
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