NICKEL-ENHANCED SOLID-PHASE EPITAXIAL REGROWTH OF AMORPHOUS-SILICON

被引：15

作者：

MOHADJERI, B ^{[1
]}

LINNROS, J ^{[1
]}

SVENSSON, BG ^{[1
]}

OSTLING, M ^{[1
]}

机构：

[1] ROYAL INST TECHNOL, POB 1298, S-16428 KISTA, SWEDEN

来源：

PHYSICAL REVIEW LETTERS | 1992年 / 68卷 / 12期

关键词：

D O I：

10.1103/PhysRevLett.68.1872

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

Low-temperature solid-phase epitaxial regrowth of amorphous silicon (a-Si) is reported for an ion-amorphized Ni/Si structure. The epitaxial regrowth follows after monosilicide formation upon heating to only 425-degrees-C, as evidenced by Rutherford backscattering and channeling measurements and transmission electron microscopy. The regrowth rate of the a-Si layer (thickness approximately 600 angstrom) is enhanced by more than a factor of 300 compared with ordinary solid-phase epitaxy of ion-implanted a-Si. This is attributed to results from redistribution of Ni towards the a-Si/c-Si interface, as shown by secondary ion mass spectrometry, where the presence of Ni, or Ni-silicide nuclei, enhances the solid-phase epitaxy.

引用

页码：1872 / 1875

页数：4

共 50 条

[41] Stressed solid-phase epitaxial growth of ion-implanted amorphous silicon
Rudawski, N. G.
Jones, K. S.
Gwilliam, R.
MATERIALS SCIENCE & ENGINEERING R-REPORTS, 2008, 61 (1-6): : 40 - 58
[42] INVESTIGATION OF SOLID-PHASE EPITAXIAL REGROWTH ON ION-IMPLANTED SILICON BY BACKSCATTERING SPECTROMETRY AND ELLIPSOMETRY
FRIED, M
LOHNER, T
VIZKELETHY, G
JAROLI, E
MEZEY, G
GYULAI, J
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1986, 15 (1-6): : 422 - 424
[43] Solid-Phase Epitaxial Regrowth of Phosphorus Implanted Amorphized Germanium
Simoen, E.
Brugere, A.
Satta, A.
Van Daele, B.
Brijs, B.
Richard, O.
Geypen, J.
Meuris, M.
Vandervorst, W.
SIGE, GE, AND RELATED COMPOUNDS 3: MATERIALS, PROCESSING, AND DEVICES, 2008, 16 (10): : 1031 - 1038
[44] EFFECT OF PRESSURE ON THE SOLID-PHASE EPITAXIAL REGROWTH RATE OF SI
NYGREN, E
AZIZ, MJ
TURNBULL, D
POATE, JM
JACOBSON, DC
HULL, R
APPLIED PHYSICS LETTERS, 1985, 47 (03) : 232 - 233
[45] PHENOMENOLOGICAL THEORY OF EXPLOSIVE SOLID-PHASE CRYSTALLIZATION OF EXPLOSIVE SOLID-PHASE CRYSTALLIZATION OF AMORPHOUS-SILICON .1. STATIONARY SOLUTIONS
HEINIG, KH
GEILER, HD
PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1985, 92 (02): : 421 - 430
[46] SOLID-PHASE EPITAXY OF AMORPHOUS-SILICON DEPOSITED OVER SIO2 WINDOWS
WANG, YY
CHEUNG, NW
SADANA, DK
STRATTMAN, M
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1983, 130 (03) : C99 - C99
[47] THE INFLUENCE OF ION-IMPLANTATION ON SOLID-PHASE EPITAXY OF AMORPHOUS-SILICON DEPOSITED BY LPCVD
WANG, YY
CHEUNG, NW
SADANA, DK
JOU, C
STRATHMAN, M
PROCEEDINGS OF THE SOCIETY OF PHOTO-OPTICAL INSTRUMENTATION ENGINEERS, 1985, 530 : 70 - 74
[48] Athermal germanium migration in strained silicon layers during junction formation with solid-phase epitaxial regrowth
Vandervorst, W
Janssens, T
Brijs, B
Delhougne, R
Loo, R
Caymax, M
Pawlak, BJ
Posselt, M
APPLIED PHYSICS LETTERS, 2005, 86 (08) : 1 - 3
[49] Out-Diffusion of Cesium and Rubidium from Amorphized Silicon during Solid-Phase Epitaxial Regrowth
Maier, R.
Haeublein, V.
Ryssel, H.
2014 20TH INTERNATIONAL CONFERENCE ON ION IMPLANTATION TECHNOLOGY (IIT 2014), 2014,
[50] EPITAXIAL EXPLOSIVE CRYSTALLIZATION OF AMORPHOUS-SILICON
POLMAN, A
MOUS, DJW
STOLK, PA
SINKE, WC
BULLELIEUWMA, CWT
VANDENHOUDT, DEW
APPLIED PHYSICS LETTERS, 1989, 55 (11) : 1097 - 1099

← 1 2 3 4 5 →