NICKEL-ENHANCED SOLID-PHASE EPITAXIAL REGROWTH OF AMORPHOUS-SILICON

被引：15
|
作者：
MOHADJERI, B [1 ]
LINNROS, J [1 ]
SVENSSON, BG [1 ]
OSTLING, M [1 ]
机构：
[1] ROYAL INST TECHNOL, POB 1298, S-16428 KISTA, SWEDEN
来源：
PHYSICAL REVIEW LETTERS | 1992年 / 68卷 / 12期
关键词：
D O I：
10.1103/PhysRevLett.68.1872
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
Low-temperature solid-phase epitaxial regrowth of amorphous silicon (a-Si) is reported for an ion-amorphized Ni/Si structure. The epitaxial regrowth follows after monosilicide formation upon heating to only 425-degrees-C, as evidenced by Rutherford backscattering and channeling measurements and transmission electron microscopy. The regrowth rate of the a-Si layer (thickness approximately 600 angstrom) is enhanced by more than a factor of 300 compared with ordinary solid-phase epitaxy of ion-implanted a-Si. This is attributed to results from redistribution of Ni towards the a-Si/c-Si interface, as shown by secondary ion mass spectrometry, where the presence of Ni, or Ni-silicide nuclei, enhances the solid-phase epitaxy.
引用
收藏
页码：1872 / 1875
页数：4
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