INTERDEPENDENCE OF STRAIN, PRECIPITATION, AND DISLOCATION FORMATION IN EPITAXIAL SE-DOPED GAAS

被引：35
|
作者：
ABRAHAMS, MS [1 ]
BLANC, J [1 ]
BUIOCCHI, CJ [1 ]
机构：
[1] RCA LABS,PRINCETON,NJ 08540
来源：
JOURNAL OF APPLIED PHYSICS | 1974年 / 45卷 / 08期
关键词：
D O I：
10.1063/1.1663773
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
引用
收藏
页码：3277 / 3287
页数：11
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