SI DOPANT MIGRATION AND THE ALGAAS/GAAS INVERTED INTERFACE

被引：78
|
作者：
PFEIFFER, L [1 ]
SCHUBERT, EF [1 ]
WEST, KW [1 ]
MAGEE, CW [1 ]
机构：
[1] EVANS E INC,PLAINSBORO,NJ 08536
来源：
APPLIED PHYSICS LETTERS | 1991年 / 58卷 / 20期
关键词：
D O I：
10.1063/1.104915
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Electron transport in quantum well modulation delta-doped on either the normal or the inverted side has revealed the major cause of the long-puzzling inferior transport characteristics of the inverted interface. For growth conditions optimized for best transport with normal-side doping,we find migration of the Si dopant toward the inverted interface during growth to be the primary reason for the reduced inverted well mobility. This new understanding has allowed us to grow modulation-doped inverted quantum wells of unprecedented quality having electron mobilities as high as 2.4 x 10(6) cm2/V s at 4.2 K and 3.0 x 10(6) cm2/V s at 1.0 K.
引用
收藏
页码：2258 / 2260
页数：3
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