共 50 条
- [22] Influence of n-GaAs/i-AlGaAs heterostructure interfaces on the electrical properties of the n-GaAs channel layer MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 1997, 44 (1-3): : 8 - 11
- [24] Influence of n-GaAs/i-AlGaAs heterostructure interfaces on the electrical properties of the n-GaAs channel layer Mater Sci Eng B Solid State Adv Technol, 1-3 (8-11):
- [26] Effect of neutron bombardment on the electrical characteristics of n-GaAs PROCEEDING OF THE TENTH INTERNATIONAL WORKSHOP ON THE PHYSICS OF SEMICONDUCTOR DEVICES, VOLS I AND II, 2000, 3975 : 230 - 233
- [28] Optical and electrical characterisation of plasma processed N-GaAs DIAGNOSTIC TECHNIQUES FOR SEMICONDUCTOR MATERIALS PROCESSING II, 1996, 406 : 327 - 332
- [29] LOW-RESISTIVITY OHMIC CONTACTS TO MODERATELY DOPED N-GAAS WITH LOW-TEMPERATURE PROCESSING JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1995, 13 (03): : 758 - 762