SILICON DIOXIDE REACTIVE ION ETCHING DEPENDENCE ON SHEATH VOLTAGE

被引：17
|
作者：
FORTUNO, G
机构：
来源：
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS | 1986年 / 4卷 / 03期
关键词：
D O I：
10.1116/1.573841
中图分类号：
TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
引用
收藏
页码：744 / 747
页数：4
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