INVESTIGATION OF L-BAND TUNNEL-DIODE AMPLIFIER AT LOW TEMPERATURES

被引：1

作者：

STACHEJKO, V

机构：

来源：

PROCEEDINGS OF THE IEEE | 1964年 / 52卷 / 11期

关键词：

D O I：

10.1109/PROC.1964.3392

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：1368 / +

页数：1

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