GRAIN-BOUNDARIES IN POLYCRYSTALLINE ALUMINA

被引：8

作者：

LARTIGUE, S

PRIESTER, L

机构：

[1] ETABLISSEMENT TECH CENT ARMEMENT,F-94110 ARCUEIL,FRANCE

[2] UNIV PARIS 11,MET PHYS LAB,F-91405 ORSAY,FRANCE

来源：

JOURNAL DE PHYSIQUE | 1985年 / 46卷 / NC-4期

关键词：

D O I：

10.1051/jphyscol:1985410

中图分类号：

学科分类号：

摘要：

引用

页码：101 / 106

页数：6

共 50 条

[41] NEUTRALIZATION AND BONDING MECHANISMS OF SHALLOW ACCEPTORS AT GRAIN-BOUNDARIES IN POLYCRYSTALLINE SILICON
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[42] ENERGY-DISTRIBUTION OF TRAPPING STATES AT GRAIN-BOUNDARIES IN POLYCRYSTALLINE SILICON
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[48] CARRIER RECOMBINATION AT GRAIN-BOUNDARIES IN POLYCRYSTALLINE SILICON UNDER OPTICAL ILLUMINATION
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[49] STRUCTURE AND LOCAL ELECTRICAL-PROPERTIES OF GRAIN-BOUNDARIES IN POLYCRYSTALLINE SEMICONDUCTORS
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[50] EFFECTS OF CRYSTALLIZATION ON TRAP STATE DENSITIES AT GRAIN-BOUNDARIES IN POLYCRYSTALLINE SILICON
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