SURFACE-ANALYSIS FOR SI-WAFERS USING TOTAL REFLECTION X-RAY-FLUORESCENCE ANALYSIS

被引：21

作者：

BERNEIKE, W ^{[1
]}

KNOTH, J ^{[1
]}

SCHWENKE, H ^{[1
]}

WEISBROD, U ^{[1
]}

机构：

[1] GESELL KERNENERGIEVERWERTUNG SCHIFFBAU SCHIFFAHRT,FORSCHUNGSZENTRUM GEESTHACHT GMBH,D-2054 GEESTHACHT,FED REP GER

来源：

FRESENIUS ZEITSCHRIFT FUR ANALYTISCHE CHEMIE | 1989年 / 333卷 / 4-5期

关键词：

D O I：

10.1007/BF00572369

中图分类号：

O65 [分析化学];

学科分类号：

070302 ; 081704 ;

摘要：

引用

页码：524 / 526

页数：3

共 50 条

[1] TOTAL REFLECTION X-RAY-FLUORESCENCE SPECTROMETRY FOR SURFACE-ANALYSIS
KNOTH, J
SCHWENKE, H
WEISBROD, U
SPECTROCHIMICA ACTA PART B-ATOMIC SPECTROSCOPY, 1989, 44 (05) : 477 - 481
[2] APPLICATION OF TOTAL REFLECTION X-RAY-FLUORESCENCE IN SEMICONDUCTOR SURFACE-ANALYSIS
PENKA, V
HUB, W
SPECTROCHIMICA ACTA PART B-ATOMIC SPECTROSCOPY, 1989, 44 (05) : 483 - 490
[3] QUANTITATIVE-ANALYSIS OF SURFACE CONTAMINATIONS ON SI WAFERS BY TOTAL REFLECTION X-RAY-FLUORESCENCE
KONDO, H
RYUTA, J
MORITA, E
YOSHIMI, T
SHIMANUKI, Y
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1992, 31 (1A-B): : L11 - L13
[4] CALIBRATION PROCEDURE FOR QUANTITATIVE SURFACE-ANALYSIS BY TOTAL-REFLECTION X-RAY-FLUORESCENCE
TORCHEUX, L
DEGRAEVE, B
MAYEUX, A
DELAMAR, M
SURFACE AND INTERFACE ANALYSIS, 1994, 21 (03) : 192 - 198
[5] Quantitative analysis of surface contaminations on Si wafers by total reflection X-ray fluorescence
Kondo, Hideyuki, 1600, (31):
[6] BASIC FEATURES OF TOTAL-REFLECTION X-RAY-FLUORESCENCE ANALYSIS ON SILICON-WAFERS
BERNEIKE, W
SPECTROCHIMICA ACTA PART B-ATOMIC SPECTROSCOPY, 1993, 48 (02) : 269 - 275
[7] TOTAL REFLECTION X-RAY-FLUORESCENCE SPECTROMETRY FOR QUANTITATIVE SURFACE AND LAYER ANALYSIS
WEISBROD, U
GUTSCHKE, R
KNOTH, J
SCHWENKE, H
APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 1991, 53 (05): : 449 - 456
[8] TOTAL-REFLECTION X-RAY-FLUORESCENCE ANALYSIS USING MONOCHROMATIC BEAM
IIDA, A
GOHSHI, Y
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1984, 23 (11): : 1543 - 1544
[9] APPLICATION OF SURFACE-ANALYSIS METHODS TO THE CHARACTERIZATION OF SI-WAFERS FOLLOWING VARIOUS TREATMENTS
GRUNDNER, M
FRESENIUS ZEITSCHRIFT FUR ANALYTISCHE CHEMIE, 1984, 319 (6-7): : 853 - 854
[10] TOTAL-REFLECTION X-RAY-FLUORESCENCE ANALYSIS USING SPECIAL X-RAY SOURCES
WOBRAUSCHEK, P
KREGSAMER, P
LADISICH, W
RIEDER, R
STRELI, C
SPECTROCHIMICA ACTA PART B-ATOMIC SPECTROSCOPY, 1993, 48 (02) : 143 - 151

← 1 2 3 4 5 →