STUDY OF 2 DIFFERENT DEEP LEVELS IN UNDOPED LEC SI-GAAS BY PHOTO-LUMINESCENCE SPECTROSCOPY

被引：25
|
作者：
KIKUTA, T
TERASHIMA, K
ISHIDA, K
机构：
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS | 1983年 / 22卷 / 07期
关键词：
D O I：
10.1143/JJAP.22.L409
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
引用
收藏
页码：L409 / L411
页数：3
相关论文
共 50 条
  • [21] DETECTION OF EL2 IN UNDOPED LEC GaAs BY A NOVEL VARIATION OF PHOTO-INDUCED TRANSIENT SPECTROSCOPY.
    Blight, S.R.
    Page, A.D.
    Ladbrooke, P.H.
    Thomas, H.
    Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes, 1987, 26 (08): : 1388 - 1389
  • [22] HIGH-PRESSURE PHOTO-LUMINESCENCE AND RESONANT RAMAN STUDY OF GAAS
    YU, PY
    WELBER, B
    SOLID STATE COMMUNICATIONS, 1978, 25 (04) : 209 - 211
  • [23] PHOTO-LUMINESCENCE OF THERMALLY TREATED N-TYPE SI-DOPED GAAS
    LUM, WY
    WIEDER, HH
    JOURNAL OF APPLIED PHYSICS, 1978, 49 (12) : 6187 - 6188
  • [24] On deep levels in high-resistivity LEC-GaAs investigated by means of photo induced current transient spectroscopy
    Seghier, D
    Gislason, HP
    SEMICONDUCTING AND INSULATING MATERIALS, 1996: PROCEEDINGS OF THE 9TH CONFERENCE ON SEMICONDUCTING AND INSULATING MATERIALS (SIMC'96), 1996, : 145 - 148
  • [25] UNEXPECTEDLY HIGH-ENERGY PHOTO-LUMINESCENCE OF HIGHLY SI DOPED GAAS GROWN BY MOVPE
    DRUMINSKI, M
    WOLF, HD
    ZSCHAUER, KH
    WITTMAACK, K
    JOURNAL OF CRYSTAL GROWTH, 1982, 57 (02) : 318 - 324
  • [26] PHOTO-LUMINESCENCE STUDIES OF ISOELECTRONIC BOUND EXCITONS ASSOCIATED WITH THE DEEP ACCEPTORS IN AND TL IN SI
    THEWALT, MLW
    ZIEMELIS, UO
    WATKINS, SP
    PARSONS, RR
    CANADIAN JOURNAL OF PHYSICS, 1982, 60 (11) : 1691 - 1708
  • [27] PHOTOINDUCED TRANSIENT SPECTROSCOPY PITS STUDY ON UNDOPED LEC GROWN SEMI-INSULATING GAAS
    FANG, ZQ
    SHAN, L
    SCHLESINGER, TE
    MILNES, AG
    SOLID-STATE ELECTRONICS, 1989, 32 (05) : 405 - 411
  • [28] PHOTO-LUMINESCENCE STUDY OF THE INCORPORATION OF SILICON IN GAAS GROWN BY MOLECULAR-BEAM EPITAXY
    MENDEZ, EE
    HEIBLUM, M
    FISHER, R
    KLEM, J
    THORNE, RE
    MORKOC, H
    JOURNAL OF APPLIED PHYSICS, 1983, 54 (07) : 4202 - 4204
  • [29] DETECTION OF EL2 IN UNDOPED LEC GAAS BY A NOVEL VARIATION OF PHOTOINDUCED TRANSIENT SPECTROSCOPY
    BLIGHT, SR
    PAGE, AD
    LADBROOKE, PH
    THOMAS, H
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1987, 26 (08): : 1388 - 1389
  • [30] TIME-DEPENDENT SPECTROSCOPY OF PHOTO-LUMINESCENCE FROM SIO2
    GEE, CM
    KASTNER, M
    BULLETIN OF THE AMERICAN PHYSICAL SOCIETY, 1980, 25 (03): : 385 - 385
12345