STUDY OF 2 DIFFERENT DEEP LEVELS IN UNDOPED LEC SI-GAAS BY PHOTO-LUMINESCENCE SPECTROSCOPY

被引：25
|
作者：
KIKUTA, T
TERASHIMA, K
ISHIDA, K
机构：
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS | 1983年 / 22卷 / 07期
关键词：
D O I：
10.1143/JJAP.22.L409
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
引用
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页码：L409 / L411
页数：3
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