Electrical properties of Ge-70: Ga near the metal-insulator transition

被引：2
|
作者：
Errai, M. [1 ]
El Kaaouachi, A. [1 ]
El Idrissi, H. [2 ]
机构：
[1] Univ Ibn Zohr, Fac Sci, Lab MSTI, Ecole Super Tecchnol Agadir, BP 33-S, Agadir, Morocco
[2] Univ Hassan II Mohammedia Casablanca, Lab Elect Electrotech Automat & Traitement Inform, Dept Genie Elect, Fac Sci & Tech Mohammedia, Mohammadia, Morocco
来源：
JOURNAL OF SEMICONDUCTORS | 2015年 / 36卷 / 06期
关键词：
Ge-70: Ga semiconductor; low temperature; impurity concentration; metal-insulator; variable range hopping conductivity; transport properties;
D O I：
10.1088/1674-4926/36/6/062001
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
The results of the metal-insulator transition (MIT) induced by impurity concentration are presented in the case of metallic and insulating samples Ge-70: Ga p-type. The eight samples studied have Ga concentrations N ranging from 1.848 x 10(17) to 1.912 x 10(17) cm(-3). The conductivity measurements were carried out at low temperature in the range 1 to 0.019 K. We provide physical explanations to explain the behaviors of the temperature dependence of the electrical conductivity in both sides of the MIT. The data are for a Ge-70: Ga sample prepared and reported by Itoh et al.
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页数：5
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