HIGH-PERFORMANCE ION-IMPLANTED LOW-NOISE GAAS-MESFETS

被引：7
|
作者：
FENG, M
EU, VK
KANBER, H
HACKETT, R
机构：
来源：
ELECTRON DEVICE LETTERS | 1982年 / 3卷 / 11期
关键词：
D O I：
10.1109/EDL.1982.25589
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：327 / 329
页数：3
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