STUDY OF CLEAVED METAL-INP (N) CONTACTS

被引：11
|
作者：
BARRET, C [1 ]
MAAREF, H [1 ]
机构：
[1] UNIV PARIS 11, INST ELECTR FONDAMENTALE, CNRS, UA 22, F-91405 ORSAY, FRANCE
来源：
SOLID-STATE ELECTRONICS | 1993年 / 36卷 / 06期
关键词：
D O I：
10.1016/0038-1101(93)90010-N
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Au, Ag, Al and Pd-InP (n type) interfaces were obtained by UHV and air cleavage. The interfaces were characterized by electrical methods: I-V, C-V, SCS (Schottky Capacitance Spectroscopy). In spite of great variations in the reactivities of the deposited metals and two kinds of interface preparation, the Schottky barrier heights (except air cleaved Au-InP) are quite similar. The study of interface states by SCS shows the presence of two characteristic states, regardless of which metal, localized near E(c)-0.25 eV and E(c)-0.37 eV. The latter may play a significant role in the Fermi level pinning.
引用
收藏
页码：879 / 884
页数：6
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