共 50 条
- [34] NONEXPONENTIAL PHOTOIONIZATION OF DX-CENTERS IN SI-DOPED ALXGA1-XAS PHYSICAL REVIEW B, 1992, 46 (15): : 9772 - 9775
- [38] FIELD-EFFECT ON THE DEEP LEVELS AND DX CENTERS IN ALXGA1-XAS/GAAS AND INXGA1-XAS/GAAS JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1992, 10 (05): : 2323 - 2330
- [39] Electric field effect on the electron emission from Te-DX in AlxGa1-xAs MATERIALS SCIENCE & ENGINEERING C-BIOMIMETIC AND SUPRAMOLECULAR SYSTEMS, 2006, 26 (2-3): : 580 - 582
- [40] DEEP LEVELS AND DX CENTERS IN ALXGA1-XAS/GAAS .1. COMPOSITION DEPENDENCE STUDY JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1992, 10 (01): : 84 - 93