ELECTRON-MICROSCOPY STUDIES OF PULSED ELECTRON-BEAM ANNEALING IN PHOSPHORUS-IMPLANTED SILICON

被引：4

作者：

THOLOMIER, M ^{[1
]}

PITAVAL, M ^{[1
]}

AMBRI, M ^{[1
]}

BARBIER, D ^{[1
]}

LAUGIER, A ^{[1
]}

机构：

[1] INST NATL SCI APPL LYON, PHYS MAT LAB, F-69621 VILLEURBANNE, FRANCE

来源：

JOURNAL OF APPLIED PHYSICS | 1983年 / 54卷 / 03期

关键词：

D O I：

10.1063/1.332142

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1588 / 1594

页数：7

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