ELECTRICAL AND OPTICAL CHARACTERISTICS OF AN A-SI-H/C-SI HETEROJUNCTION SWITCH

被引：7

作者：

CHEN, YW ^{[1
]}

FANG, YK ^{[1
]}

LEE, HD ^{[1
]}

CHANG, CY ^{[1
]}

机构：

[1] NATL CHIAO TUNG UNIV,INST ELECTR,HSINCHU,TAIWAN

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1990年 / 29卷 / 08期

关键词：

Diffusion length; Heterojunction; Hydrogenated amorphous silicon; Negative resistance; Optical switch; Switching device;

D O I：

10.1143/JJAP.29.1415

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

A novel structure of a three-terminal a-Si:H(p+-i-n)/c-Si(p-n) heterojunction threshold switching device is developed. The device can be controlled both by a voltage-controlled mode and a current-injection mode. The voltage control gain and current triggering capability are 0.9 and 5×10-3 V/µA, respectively. When this switching device is operated as an optical switch, the light triggering sensitivity is 5.8×10-3 V/µW. © 1990 The Japan Society of Applied Physics.

引用

页码：1415 / 1418

页数：4

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