INP INGAAS BURIED-STRUCTURE AVALANCHE PHOTODIODES

被引：12
|
作者：
YASUDA, K
KISHI, Y
SHIRAI, T
MIKAWA, T
YAMAZAKI, S
KANEDA, T
机构：
来源：
ELECTRONICS LETTERS | 1984年 / 20卷 / 04期
关键词：
D O I：
10.1049/el:19840106
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：158 / 159
页数：2
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