COMPARISON OF ELECTRONICS-RELIABILITY ASSESSMENT APPROACHES

被引:59
|
作者
CUSHING, MJ [1 ]
MORTIN, DE [1 ]
STADTERMAN, TJ [1 ]
MALHOTRA, A [1 ]
机构
[1] UNIV MARYLAND,CALCE ELECTR PACKAGING RES CTR,COLLEGE PK,MD 20742
关键词
PHYSICS OF FAILURE; MIL-HDBK-217; RELIABILITY PREDICTION;
D O I
10.1109/24.273574
中图分类号
TP3 [计算技术、计算机技术];
学科分类号
0812 ;
摘要
Two general approaches are available for assessing reliability of electronics during design: device failure-rate prediction, physics-of-failure. This article broadly compares these two approaches in a way that is readily understandable by the wide range of readers concerned with the design, manufacture, and support of electronic equipment. The most prominent device failure-rate prediction methodology, US Mil-Hdbk-217, does not provide the designer or manufacturer with any insight into, or control over, the actual causes of failure since the cause-and-effect relationships impacting reliability are not captured therein. Mil-Hdbk-217 does not address the design & usage parameters that strongly influence reliability; this problem results in an inability to tailor a Mil-Hdbk-217 prediction using these key parameters. Physics-of-failure methodology is an approach to design, reliability assessment, testing, screening, and stress margins that uses knowledge of root-cause failure mechanisms to prevent product failures through robust design & manufacturing practices. This approach proactively incorporates reliability into the design process by establishing a scientific basis for evaluating new materials, structures, and electronic technologies. This approach encourages innovative, cost-effective design through realistic reliability assessment.
引用
收藏
页码:542 / 546
页数:5
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