CHEMICAL BEAM EPITAXIAL-GROWTH OF EXTREMELY HIGH-QUALITY INGAAS ON INP

被引：40
|
作者：
TSANG, WT
DAYEM, AH
CHIU, TH
CUNNINGHAM, JE
SCHUBERT, EF
DITZENBERGER, JA
SHAH, J
ZYSKIND, JL
TABATABAIE, N
机构：
[1] AT&T BELL LABS,CRAWFORD HILL LAB,HOLMDEL,NJ 07733
[2] BELL COMMUN RES,HOLMDEL,NJ 07733
来源：
APPLIED PHYSICS LETTERS | 1986年 / 49卷 / 03期
关键词：
D O I：
10.1063/1.97214
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
引用
收藏
页码：170 / 172
页数：3
相关论文
共 50 条
  • [31] Molecular beam epitaxial growth of high-quality GaN nanocolumns
    Van Nostrand, JE
    Averett, KL
    Cortez, R
    Boeckl, J
    Stutz, CE
    Sanford, NA
    Davydov, AV
    Albrecht, JD
    JOURNAL OF CRYSTAL GROWTH, 2006, 287 (02) : 500 - 503
  • [32] NEW APPROACH TO THE HIGH-QUALITY EPITAXIAL-GROWTH OF LATTICE-MISMATCHED MATERIALS
    LURYI, S
    SUHIR, E
    APPLIED PHYSICS LETTERS, 1986, 49 (03) : 140 - 142
  • [33] THE GROWTH OF HIGH-QUALITY INGAAS AND INALAS BY MOLECULAR-BEAM EPITAXY
    BROWN, AS
    DELANEY, MJ
    GRIEM, T
    HENIGE, J
    JOURNAL OF ELECTRONIC MATERIALS, 1987, 16 (04) : A22 - A23
  • [34] MOLECULAR-BEAM EPITAXIAL-GROWTH OF HIGH-QUALITY GAAS ON SI USING A HIGH-TEMPERATURE INSITU ANNEALING PROCESS
    KAO, YC
    LIU, HY
    TSAI, HL
    DUNCAN, WM
    KIM, TS
    SHICHIJO, H
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1990, 8 (02): : 250 - 253
  • [35] EPITAXIAL-GROWTH OF INP AND RELATED ALLOYS
    SHARMA, BL
    PROGRESS IN CRYSTAL GROWTH AND CHARACTERIZATION OF MATERIALS, 1986, 12 (1-4) : 295 - 318
  • [36] EXTREMELY HIGH-QUALITY GA0.47IN0.53AS/INP QUANTUM-WELLS GROWN BY CHEMICAL BEAM EPITAXY
    TSANG, WT
    SCHUBERT, EF
    APPLIED PHYSICS LETTERS, 1986, 49 (04) : 220 - 222
  • [37] MOLECULAR-BEAM EPITAXIAL-GROWTH OF HIGH-QUALITY GAAS ON UNTILTED (001) SI SUBSTRATES ASSISTED BY ELECTRON-BEAM IRRADIATION
    LEEM, JY
    KIM, DY
    KANG, TW
    LEE, JJ
    OH, JE
    APPLIED PHYSICS LETTERS, 1990, 57 (21) : 2228 - 2230
  • [38] EPITAXIAL-GROWTH OF HIGH-QUALITY ZNSE ON SI SUBSTRATES BY MOLECULAR-BEAM EPITAXY AND APPLICATION TO DC ELECTROLUMINESCENT CELLS
    MINO, N
    KOBAYASHI, M
    KONAGAI, M
    TAKAHASHI, K
    JOURNAL OF APPLIED PHYSICS, 1985, 58 (02) : 793 - 796
  • [39] MOLECULAR-BEAM EPITAXIAL-GROWTH OF HIGH-QUALITY IN0.52AL0.48AS AND IN1-X-YGAXALYAS
    CHIN, A
    BHATTACHARYA, P
    HONG, WP
    LI, WQ
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1988, 6 (02): : 665 - 667
  • [40] CHEMICAL BEAM EPITAXIAL-GROWTH OF HIGH OPTICAL-QUALITY ALGAAS - THE INFLUENCE OF PRECURSOR PURITY ON MATERIAL PROPERTIES
    FREER, RW
    MARTIN, T
    LANE, PA
    WHITEHOUSE, CR
    WHITAKER, TJ
    HOULTON, M
    CALCOTT, PDJ
    LEE, D
    RUSHWORTH, SA
    JOURNAL OF CRYSTAL GROWTH, 1995, 150 (1-4) : 539 - 545
12345