ELECTRON-BEAM ANNEALING OF THE IMPLANTED SILICON LAYERS IN SIO2-SI STRUCTURES

被引：0
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作者：
LYSENKO, VS
NAZAROV, AN
RUDENKO, TE
YACHMENEV, SN
LOKSHIN, MM
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来源：
UKRAINSKII FIZICHESKII ZHURNAL | 1986年 / 31卷 / 03期
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中图分类号：
O4 [物理学];
学科分类号：
0702 ;
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页码：434 / 438
页数：5
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