DIFFUSION-CONTROLLED MOVING BOUNDARIES OF TERNARY AND BINARY OXIDES DURING INTERNAL OXIDATION OF DILUTE ALLOYS

被引：0

作者：

REDDY, SNS

RAGHAVAN, KS

PROBST, KH

机构：

[1] IBM CORP,DIV GEN TECHNOL,HOPEWELL JUNCTION,NY 12533

[2] INDIAN INST TECHNOL,DEPT MET,MADRAS 600036,TAMIL NADU,INDIA

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1985年 / 132卷 / 08期

关键词：

D O I：

暂无

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

引用

页码：C363 / C363

页数：1

共 34 条

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[9] Mean field rate equation for diffusion-controlled growth in binary alloys
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