EQUIPMENT FOR CHEMICAL VAPOR-DEPOSITION OF SEMICONDUCTING TIN OXIDE-FILMS ON CYLINDRICAL OBJECTS

被引：0

作者：

JANI, VA ^{[1
]}

RAMANUJAM, MA ^{[1
]}

GHARE, DB ^{[1
]}

机构：

[1] INDIAN INST SCI,DEPT HIGH VOLTAGE ENGN,BANGALORE 560012,INDIA

来源：

INDIAN JOURNAL OF TECHNOLOGY | 1976年 / 14卷 / 05期

关键词：

D O I：

暂无

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：231 / 233

页数：3

共 50 条

[1] GROWTH AND CHARACTERIZATION OF TIN OXIDE-FILMS PREPARED BY CHEMICAL VAPOR-DEPOSITION
SANON, G
RUP, R
MANSINGH, A
THIN SOLID FILMS, 1990, 190 (02) : 287 - 301
[2] CHEMICAL VAPOR-DEPOSITION OF FLUORINE-DOPED TIN OXIDE-FILMS
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BORMAN, C
GORDON, RG
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1982, 129 (06) : C232 - C232
[3] CHEMICAL VAPOR-DEPOSITION OF TIN OXIDE-FILMS AND THEIR ELECTRICAL-PROPERTIES
SUNDARAM, KB
BHAGAVAT, GK
JOURNAL OF PHYSICS D-APPLIED PHYSICS, 1981, 14 (02) : 333 - 338
[4] REACTIVE PATHWAYS IN THE CHEMICAL VAPOR-DEPOSITION OF TIN OXIDE-FILMS BY TETRAMETHYLTIN OXIDATION
BORMAN, CG
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[5] THIN TIN OXIDE-FILMS OF LOW CONDUCTIVITY PREPARED BY CHEMICAL VAPOR-DEPOSITION
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[6] CHEMICAL COMPOSITION AND ELECTRICAL PROPERTIES OF TIN OXIDE-FILMS PREPARED BY VAPOR-DEPOSITION
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MARCOTTE, VC
CHOU, NJ
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1973, 120 (05) : 701 - 702
[7] FLUORINE CONCENTRATION IN DOPED TIN OXIDE-FILMS PREPARED BY CHEMICAL VAPOR-DEPOSITION
XIA, YY
LENNARD, WN
AKANO, U
APPLIED PHYSICS LETTERS, 1992, 60 (03) : 335 - 337
[8] CHEMICAL VAPOR-DEPOSITION OF SILICON DIOXIDE BARRIER LAYERS FOR CONDUCTIVITY ENHANCEMENT OF TIN OXIDE-FILMS
ELLIS, FB
HOUGHTON, J
JOURNAL OF MATERIALS RESEARCH, 1989, 4 (04) : 863 - 872
[9] CHEMICAL VAPOR-DEPOSITION OF TRANSPARENT, ELECTRICALLY CONDUCTIVE TIN OXIDE-FILMS FORMED FROM DIBUTYL TIN DIACETATE
KANE, J
SCHWEIZER, HP
KERN, W
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1975, 122 (08) : 1144 - 1149
[10] CHEMICAL VAPOR-DEPOSITION OF ANTIMONY-DOPED TIN OXIDE-FILMS FORMED FROM DIBUTYL TIN DIACETATE
KANE, J
SCHWEIZER, HP
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JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1976, 123 (02) : 270 - 277

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