DEEP-LEVEL LUMINESCENCE IN NI-DIFFUSED GAAS

被引：1
|
作者：
FUJIWARA, Y
KOJIMA, A
NISHINO, T
HAMAKAWA, Y
机构：
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS | 1983年 / 22卷 / 07期
关键词：
D O I：
10.1143/JJAP.22.L476
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
引用
收藏
页码：L476 / L478
页数：3
相关论文
共 50 条
  • [41] Deep-level defects at lattice-mismatched GaAsSb/GaAs interface
    Wosinski, T.
    Makosa, A.
    Raczynska, J.
    Acta Physica Polonica A, 1995, 87 (2 pt 2)
  • [42] DEEP-LEVEL DEFECTS AT LATTICE-MISMATCHED GAASSB/GAAS INTERFACE
    WOSINSKI, T
    MAKOSA, A
    RACZYNSKA, J
    ACTA PHYSICA POLONICA A, 1995, 87 (02) : 369 - 372
  • [43] DEEP-LEVEL TRANSIENT SPECTROSCOPY OF PLASTICALLY-BENT EPITAXIAL GAAS
    KADOTA, Y
    CHINO, K
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1983, 22 (10): : 1563 - 1566
  • [44] Deep-level transient spectroscopic studies of ZnSe-GaAs heterointerfaces
    Lu, F
    Zhang, SK
    Wang, J
    Li, ZS
    Ke, L
    Wang, JB
    Sun, HH
    Wang, X
    JOURNAL OF PHYSICS-CONDENSED MATTER, 1997, 9 (05) : 995 - 1004
  • [45] A THEORETICAL INVESTIGATION OF DEEP-LEVEL IMPURITIES IN SEMICONDUCTORS CHROMIUM AND MANGANESE IN GAAS
    SIGMUND, E
    BATES, CA
    PHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL MECHANICS ELECTRONIC OPTICAL AND MAGNETIC PROPERTIES, 1987, 56 (05): : 611 - 623
  • [46] Characterization of deep-level defects in GaNAs/GaAs heterostructures grown by APMOVPE
    Gelczuk, Lukasz
    Dabrowska-Szata, Maria
    Sciana, Beata
    Pucicki, Damian
    Radziewicz, Damian
    Kopalko, Krzysztof
    Tlaczala, Marek
    MATERIALS SCIENCE-POLAND, 2016, 34 (04): : 726 - 734
  • [47] Role of deep-level centers in compensated semi-insulating GaAs
    Katsoev V.V.
    Katsoev L.V.
    Il'ichev E.A.
    Russ. Microelectr., 2008, 5 (296-301): : 296 - 301
  • [48] EFFECT OF ELECTRIC-FIELD ON DEEP-LEVEL TRANSIENTS IN GAAS AND GAP
    MAKRAMEBEID, S
    APPLIED PHYSICS LETTERS, 1980, 37 (05) : 464 - 466
  • [49] CHARACTERIZATION OF DEEP-LEVEL DEFECTS IN GAAS IRRADIATED BY 1 MEV ELECTRONS
    LAI, ST
    NENER, BD
    FARAONE, L
    NASSIBIAN, AG
    HOTCHKIS, MAC
    JOURNAL OF APPLIED PHYSICS, 1993, 73 (02) : 640 - 647
  • [50] DEEP LEVEL LUMINESCENCE IN SI-DOPED GAAS
    KRESSEL, H
    NELSON, H
    VONPHILI.H
    BULLETIN OF THE AMERICAN PHYSICAL SOCIETY, 1969, 14 (03): : 357 - &
12345