COMPARISON OF THE QUANTUM-CONFINED STARK-EFFECT FOR (100)A-ORIENTED AND (311)A-ORIENTED GAAS/ALGAAS QUANTUM-WELLS USING ELECTROREFLECTANCE SPECTROSCOPY
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作者:
GOLDHAHN, R
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机构:UNIV NOTTINGHAM, DEPT PHYS, NOTTINGHAM NG7 2RD, ENGLAND
GOLDHAHN, R
SHOKHOVETS, S
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机构:UNIV NOTTINGHAM, DEPT PHYS, NOTTINGHAM NG7 2RD, ENGLAND
SHOKHOVETS, S
GOBSCH, G
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机构:UNIV NOTTINGHAM, DEPT PHYS, NOTTINGHAM NG7 2RD, ENGLAND
GOBSCH, G
NAKOV, V
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机构:UNIV NOTTINGHAM, DEPT PHYS, NOTTINGHAM NG7 2RD, ENGLAND
NAKOV, V
HENINI, M
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机构:UNIV NOTTINGHAM, DEPT PHYS, NOTTINGHAM NG7 2RD, ENGLAND
HENINI, M
HILL, G
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机构:UNIV NOTTINGHAM, DEPT PHYS, NOTTINGHAM NG7 2RD, ENGLAND
HILL, G
机构:
[1] UNIV NOTTINGHAM, DEPT PHYS, NOTTINGHAM NG7 2RD, ENGLAND
[2] UNIV SHEFFIELD, DEPT ELECTR ENGN, SHEFFIELD S1 3JD, S YORKSHIRE, ENGLAND
[3] BELARUS STATE POLYTECH ACAD, MINSK 220027, BELARUS
The excitonic subband transitions of (100)- and (311)A-oriented GaAs/AlGaAs single quantum wells (SQW's) are investigated using electroreflectance spectroscopy. The strong Franz-Keldysh-Oscillations arising from the undoped AlGaAs barrier layers are analyzed to determine the field strength within the SQW's directly from the measurements with high accuracy. Both, the orientation-dependent splitting between the first heavy and light hole subbands and their field-induced shifts are compared with the results of k . p calculations. Best agreement between experiment and theory is obtained for a set of Luttinger parameters corresponding to heavy and light hole masses of 0.55m(0) and 0.084m(0), respectively, along the [311] direction. (C) 1995 Academic Press Limited
机构:
Russian Acad Sci, Mokerov Inst Ultra High Frequency Semicond Elect, Moscow 117105, Russia
Orion R&P Assoc, JSC, Moscow 111538, RussiaRussian Acad Sci, Mokerov Inst Ultra High Frequency Semicond Elect, Moscow 117105, Russia
Klimov, E. A.
Klochkov, A. N.
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Natl Res Nucl Univ MEPhI, Moscow 115409, RussiaRussian Acad Sci, Mokerov Inst Ultra High Frequency Semicond Elect, Moscow 117105, Russia
Klochkov, A. N.
Solyankin, P. M.
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机构:
Kurchatov Inst, Natl Res Ctr, Moscow 123182, RussiaRussian Acad Sci, Mokerov Inst Ultra High Frequency Semicond Elect, Moscow 117105, Russia
Solyankin, P. M.
Sin'ko, A. S.
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Kurchatov Inst, Natl Res Ctr, Moscow 123182, Russia
Lomonosov Moscow State Univ, Fac Phys, Moscow 119991, RussiaRussian Acad Sci, Mokerov Inst Ultra High Frequency Semicond Elect, Moscow 117105, Russia
Sin'ko, A. S.
Pavlov, A. Yu.
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Russian Acad Sci, Mokerov Inst Ultra High Frequency Semicond Elect, Moscow 117105, RussiaRussian Acad Sci, Mokerov Inst Ultra High Frequency Semicond Elect, Moscow 117105, Russia
Pavlov, A. Yu.
Lavrukhin, D. V.
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Russian Acad Sci, Mokerov Inst Ultra High Frequency Semicond Elect, Moscow 117105, RussiaRussian Acad Sci, Mokerov Inst Ultra High Frequency Semicond Elect, Moscow 117105, Russia
Lavrukhin, D. V.
Pushkarev, S. S.
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机构:
Russian Acad Sci, Mokerov Inst Ultra High Frequency Semicond Elect, Moscow 117105, RussiaRussian Acad Sci, Mokerov Inst Ultra High Frequency Semicond Elect, Moscow 117105, Russia
机构:
Russian Acad Sci, Mokerov Inst Ultra High Frequency Semicond Elect, Moscow 117105, Russia
Orion R&P Assoc, JSC, Moscow 111538, RussiaRussian Acad Sci, Mokerov Inst Ultra High Frequency Semicond Elect, Moscow 117105, Russia
Klimov, E. A.
Klochkov, A. N.
论文数: 0引用数: 0
h-index: 0
机构:
Natl Res Nucl Univ MEPhI, Moscow 115409, RussiaRussian Acad Sci, Mokerov Inst Ultra High Frequency Semicond Elect, Moscow 117105, Russia
Klochkov, A. N.
Solyankin, P. M.
论文数: 0引用数: 0
h-index: 0
机构:
Kurchatov Inst, Natl Res Ctr, Moscow 123182, RussiaRussian Acad Sci, Mokerov Inst Ultra High Frequency Semicond Elect, Moscow 117105, Russia
Solyankin, P. M.
Sin'ko, A. S.
论文数: 0引用数: 0
h-index: 0
机构:
Kurchatov Inst, Natl Res Ctr, Moscow 123182, Russia
Lomonosov Moscow State Univ, Fac Phys, Moscow 119991, RussiaRussian Acad Sci, Mokerov Inst Ultra High Frequency Semicond Elect, Moscow 117105, Russia
Sin'ko, A. S.
Pavlov, A. Yu.
论文数: 0引用数: 0
h-index: 0
机构:
Russian Acad Sci, Mokerov Inst Ultra High Frequency Semicond Elect, Moscow 117105, RussiaRussian Acad Sci, Mokerov Inst Ultra High Frequency Semicond Elect, Moscow 117105, Russia
Pavlov, A. Yu.
Lavrukhin, D. V.
论文数: 0引用数: 0
h-index: 0
机构:
Russian Acad Sci, Mokerov Inst Ultra High Frequency Semicond Elect, Moscow 117105, RussiaRussian Acad Sci, Mokerov Inst Ultra High Frequency Semicond Elect, Moscow 117105, Russia
Lavrukhin, D. V.
Pushkarev, S. S.
论文数: 0引用数: 0
h-index: 0
机构:
Russian Acad Sci, Mokerov Inst Ultra High Frequency Semicond Elect, Moscow 117105, RussiaRussian Acad Sci, Mokerov Inst Ultra High Frequency Semicond Elect, Moscow 117105, Russia