首页
学术期刊
论文检测
AIGC检测
热点
更多
数据
INCREASE IN THE MINORITY-CARRIER LIFETIME IN GAAS AS A RESULT OF IRRADIATION AND HEAT-TREATMENT
被引:0
|
作者
:
GLINCHUK, KD
论文数:
0
引用数:
0
h-index:
0
GLINCHUK, KD
ZAYATS, NS
论文数:
0
引用数:
0
h-index:
0
ZAYATS, NS
PROKHOROVICH, AV
论文数:
0
引用数:
0
h-index:
0
PROKHOROVICH, AV
机构
:
来源
:
SOVIET PHYSICS SEMICONDUCTORS-USSR
|
1982年
/ 16卷
/ 12期
关键词
:
D O I
:
暂无
中图分类号
:
O469 [凝聚态物理学];
学科分类号
:
070205 ;
摘要
:
引用
收藏
页码:1433 / 1434
页数:2
相关论文
共 50 条
[21]
MINORITY-CARRIER LIFETIME AND INTERNAL QUANTUM EFFICIENCY OF SURFACE-FREE GAAS
NELSON, RJ
论文数:
0
引用数:
0
h-index:
0
NELSON, RJ
SOBERS, RG
论文数:
0
引用数:
0
h-index:
0
SOBERS, RG
JOURNAL OF APPLIED PHYSICS,
1978,
49
(12)
: 6103
-
6108
[22]
MINORITY-CARRIER PROPERTIES OF GAAS ON SILICON
AHRENKIEL, RK
论文数:
0
引用数:
0
h-index:
0
机构:
SPIRE CORP,BEDFORD,MA 01730
SPIRE CORP,BEDFORD,MA 01730
AHRENKIEL, RK
ALJASSIM, MM
论文数:
0
引用数:
0
h-index:
0
机构:
SPIRE CORP,BEDFORD,MA 01730
SPIRE CORP,BEDFORD,MA 01730
ALJASSIM, MM
DUNLAVY, DJ
论文数:
0
引用数:
0
h-index:
0
机构:
SPIRE CORP,BEDFORD,MA 01730
SPIRE CORP,BEDFORD,MA 01730
DUNLAVY, DJ
JONES, KM
论文数:
0
引用数:
0
h-index:
0
机构:
SPIRE CORP,BEDFORD,MA 01730
SPIRE CORP,BEDFORD,MA 01730
JONES, KM
VERNON, SM
论文数:
0
引用数:
0
h-index:
0
机构:
SPIRE CORP,BEDFORD,MA 01730
SPIRE CORP,BEDFORD,MA 01730
VERNON, SM
TOBIN, SP
论文数:
0
引用数:
0
h-index:
0
机构:
SPIRE CORP,BEDFORD,MA 01730
SPIRE CORP,BEDFORD,MA 01730
TOBIN, SP
HAVEN, VE
论文数:
0
引用数:
0
h-index:
0
机构:
SPIRE CORP,BEDFORD,MA 01730
SPIRE CORP,BEDFORD,MA 01730
HAVEN, VE
APPLIED PHYSICS LETTERS,
1988,
53
(03)
: 222
-
224
[23]
TEMPERATURE-DEPENDENCE OF THE MINORITY-CARRIER LIFETIME IN GAAS/ALGAAS DOUBLE HETEROSTRUCTURES
BERGMAN, JP
论文数:
0
引用数:
0
h-index:
0
机构:
Department of Physics and Measurement Technology, Linköping University
BERGMAN, JP
HALLIN, C
论文数:
0
引用数:
0
h-index:
0
机构:
Department of Physics and Measurement Technology, Linköping University
HALLIN, C
JANZEN, E
论文数:
0
引用数:
0
h-index:
0
机构:
Department of Physics and Measurement Technology, Linköping University
JANZEN, E
JOURNAL OF APPLIED PHYSICS,
1995,
78
(07)
: 4808
-
4810
[24]
METHOD TO DETERMINE MINORITY-CARRIER LIFETIME IN GAAS LIGHT-EMITTING-DIODES
MULLER, J
论文数:
0
引用数:
0
h-index:
0
MULLER, J
REICHL, H
论文数:
0
引用数:
0
h-index:
0
REICHL, H
BERNT, H
论文数:
0
引用数:
0
h-index:
0
BERNT, H
SOLID-STATE ELECTRONICS,
1979,
22
(03)
: 257
-
260
[25]
DEEP LEVELS AND MINORITY-CARRIER LIFETIME IN MOVPE P-TYPE GAAS
WANG, PJ
论文数:
0
引用数:
0
h-index:
0
机构:
IBM Thomas J. Watson Research Center, P.O. Box 218, Yorktown Heights, NY 10598, United States
WANG, PJ
KUECH, TF
论文数:
0
引用数:
0
h-index:
0
机构:
IBM Thomas J. Watson Research Center, P.O. Box 218, Yorktown Heights, NY 10598, United States
KUECH, TF
TISCHLER, MA
论文数:
0
引用数:
0
h-index:
0
机构:
IBM Thomas J. Watson Research Center, P.O. Box 218, Yorktown Heights, NY 10598, United States
TISCHLER, MA
MOONEY, PM
论文数:
0
引用数:
0
h-index:
0
机构:
IBM Thomas J. Watson Research Center, P.O. Box 218, Yorktown Heights, NY 10598, United States
MOONEY, PM
SCILLA, GJ
论文数:
0
引用数:
0
h-index:
0
机构:
IBM Thomas J. Watson Research Center, P.O. Box 218, Yorktown Heights, NY 10598, United States
SCILLA, GJ
CARDONE, F
论文数:
0
引用数:
0
h-index:
0
机构:
IBM Thomas J. Watson Research Center, P.O. Box 218, Yorktown Heights, NY 10598, United States
CARDONE, F
JOURNAL OF CRYSTAL GROWTH,
1988,
93
(1-4)
: 569
-
575
[26]
TEMPERATURE-DEPENDENCE OF MINORITY-CARRIER LIFETIME IN LOW-RESISTIVITY GAAS
KLADIS, DI
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV ATHENS, PHYS DEPT, ATHENS, GREECE
UNIV ATHENS, PHYS DEPT, ATHENS, GREECE
KLADIS, DI
EUTHYMIOU, PC
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV ATHENS, PHYS DEPT, ATHENS, GREECE
UNIV ATHENS, PHYS DEPT, ATHENS, GREECE
EUTHYMIOU, PC
JOURNAL OF APPLIED PHYSICS,
1974,
45
(06)
: 2775
-
2776
[27]
TRANSIENT RECOVERY OF MINORITY-CARRIER LIFETIME IN SILICON AFTER ULTRAVIOLET-IRRADIATION
ZHONG, L
论文数:
0
引用数:
0
h-index:
0
机构:
Department of Materials Science and Engineering, North Carolina State University, Raleigh
ZHONG, L
BUCZKOWSKI, A
论文数:
0
引用数:
0
h-index:
0
机构:
Department of Materials Science and Engineering, North Carolina State University, Raleigh
BUCZKOWSKI, A
KATAYAMA, K
论文数:
0
引用数:
0
h-index:
0
机构:
Department of Materials Science and Engineering, North Carolina State University, Raleigh
KATAYAMA, K
SHIMURA, F
论文数:
0
引用数:
0
h-index:
0
机构:
Department of Materials Science and Engineering, North Carolina State University, Raleigh
SHIMURA, F
APPLIED PHYSICS LETTERS,
1992,
61
(08)
: 931
-
933
[28]
Increase in Minority Carrier Lifetime Measured by Microwave Irradiation Method
Sameshima, T.
论文数:
0
引用数:
0
h-index:
0
机构:
Tokyo Univ Agr & Technol, Koganei, Tokyo 1848588, Japan
Tokyo Univ Agr & Technol, Koganei, Tokyo 1848588, Japan
Sameshima, T.
Betsuin, K.
论文数:
0
引用数:
0
h-index:
0
机构:
Tokyo Univ Agr & Technol, Koganei, Tokyo 1848588, Japan
Tokyo Univ Agr & Technol, Koganei, Tokyo 1848588, Japan
Betsuin, K.
Nagao, T.
论文数:
0
引用数:
0
h-index:
0
机构:
Tokyo Univ Agr & Technol, Koganei, Tokyo 1848588, Japan
Tokyo Univ Agr & Technol, Koganei, Tokyo 1848588, Japan
Nagao, T.
论文数:
引用数:
h-index:
机构:
Hasumi, M.
2012 19TH INTERNATIONAL WORKSHOP ON ACTIVE-MATRIX FLATPANEL DISPLAYS AND DEVICES (AM-FPD): TFT TECHNOLOGIES AND FPD MATERIALS,
2012,
: 285
-
288
[29]
A NEW MINORITY-CARRIER SURFACE LIFETIME TECHNIQUE
KOHN, CM
论文数:
0
引用数:
0
h-index:
0
KOHN, CM
GOLDFARB, WC
论文数:
0
引用数:
0
h-index:
0
GOLDFARB, WC
SOLID STATE TECHNOLOGY,
1995,
38
(06)
: 93
-
&
[30]
MINORITY-CARRIER LIFETIME OF ION GETTERED SILICON
RYSSEL, H
论文数:
0
引用数:
0
h-index:
0
机构:
FRAUNHOFER INST FESTKORPERTECHNOL,MUNCHEN,FED REP GER
FRAUNHOFER INST FESTKORPERTECHNOL,MUNCHEN,FED REP GER
RYSSEL, H
SCHMIEDT, B
论文数:
0
引用数:
0
h-index:
0
机构:
FRAUNHOFER INST FESTKORPERTECHNOL,MUNCHEN,FED REP GER
FRAUNHOFER INST FESTKORPERTECHNOL,MUNCHEN,FED REP GER
SCHMIEDT, B
KRANZ, H
论文数:
0
引用数:
0
h-index:
0
机构:
FRAUNHOFER INST FESTKORPERTECHNOL,MUNCHEN,FED REP GER
FRAUNHOFER INST FESTKORPERTECHNOL,MUNCHEN,FED REP GER
KRANZ, H
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1979,
126
(08)
: C360
-
C360
←
1
2
3
4
5
→