Optimized design of 4H-SiC floating junction power Schottky barrier diodes

被引：3
|
作者：
Pu Hongbin [1 ]
Cao Lin [1 ]
Chen Zhiming [1 ]
Ren Jie [1 ]
机构：
[1] Xian Univ Technol, Xian 710048, Peoples R China
来源：
JOURNAL OF SEMICONDUCTORS | 2009年 / 30卷 / 04期
关键词：
SiC; floating junction; Schottky barrier diode;
D O I：
10.1088/1674-4926/30/4/044001
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
SiC floating junction Schottky barrier diodes were simulated with software MEDICI 4.0 and their device structures were optimized based on forward and reverse electrical characteristics. Compared with the conventional power Schottky barrier diode, the device structure is featured by a highly doped drift region and embedded floating junction region, which can ensure high breakdown voltage while keeping lower specific on-state resistance, solved the contradiction between forward voltage drop and breakdown voltage. The simulation results show that with optimized structure parameter, the breakdown voltage can reach 4 kV and the specific on-resistance is 8.3 m Omega.cm(2).
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页数：3
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